FDMC8882
Features
General Description
- Max r DS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A
- Max r DS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A
- High performance technology for extremely low r DS(on)
- Termination is Lead-free and Ro HS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Application
- High side in DC
- DC Buck Converters
- Notebook battery power management
- Load switch in Notebook
Top Bottom
Pin 1
S SG S
MLP 3.3x3.3
DD D D
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source...
