FDMC8882 Description
at VGS = 10 V, ID = 10.5 A Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching...
FDMC8882 Key Features
- Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A
- Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant