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FDMQ8403 - N-Channel PowerTrench MOSFET

General Description

Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD solutions

This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.

Key Features

  • General.

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FDMQ8403 N-Channel PowerTrench® MOSFET FDMQ8403 July 2012 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET 100 V, 6 A, 110 mΩ Features General Description „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A „ Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A „ Substantial efficiency benefit in PD solutions „ RoHS Compliant This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Application „ High-Efficiency Bridge Rectifiers Top Bottom G4 D1/D4 D3/S4 G3 S3 S3 D1/D4 D3/ S1/ S4 D2 MLP 4.