FDMQ8403 Datasheet | Fairchild Semiconductor

FDMQ8403 N-Channel Power Trench® MOSFET July 2012 Green Bridge TM Series of High-Efficiency Bridge Rectifiers N-Channel Power Trench® MOSFET 100 V, 6 A, 110 mΩ Features General Description - Max r DS(on) = 110 mΩ at VGS = 10 V, ID = 3 A - Max r DS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A - Substantial efficiency benefit in PD solutions - Ro HS pliant This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Application - High-Efficiency Bridge Rectifiers Top Bottom G4 D1/D4 D3/S4 G3 S3 S3 D1/D4 D3/ S1/ S4 D2 MLP 4.5x5 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 S3 7 S3 8 G3 9 D3/S4 10 D1/D4 11 G4 12 Q3 Q2 Q4 Q1 6 S2 5 S2 4 G2 3 S1/D2 2 D1/D4 1 G1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source...