Datasheet4U Logo Datasheet4U.com

FDMQ8403 Datasheet

N-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

FDMQ8403 Overview

„ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A „ Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A „ Substantial efficiency benefit in PD solutions „ RoHS pliant This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.

FDMQ8403 Key Features

  • Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
  • Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
  • Substantial efficiency benefit in PD solutions
  • RoHS pliant
  • High-Efficiency Bridge Rectifiers
  • 55 to +150
  • 8 mV/°C

FDMQ8403 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
ON Semiconductor Logo FDMQ8403 N-Channel MOSFET ON Semiconductor

More Datasheets from Fairchild (now onsemi)

See all Fairchild (now onsemi) datasheets

Part Number Description
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench MOSFET
FDMQ8205 2 Series of High-Efficiency Bridge Rectifiers
FDMQ8205A High-Efficiency Bridge Rectifiers
FDMQ86530L N-Channel PowerTrench MOSFET
FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDM3300NZ N-Channel MOSFET
FDM3622 N-Channel PowerTrench MOSFET
FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET
FDM6296 Single N-Channel / Logic-Level / PowerTrench MOSFET
FDMA0104 N-Channel MOSFET

FDMQ8403 Distributor