FDMQ8403 Description
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD solutions RoHS pliant This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.
FDMQ8403 Key Features
- Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
- Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
- Substantial efficiency benefit in PD solutions
- RoHS pliant
- High-Efficiency Bridge Rectifiers
- 55 to +150
- 8 mV/°C