FEATURES
GENERAL DESCRIPTION
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. APPLICATIONS
Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Top Bottom Pin 1 S D5 4G S S G D6 3S D D DD D7 D8 2S 1S MOSFET MAXIMUM RATINGS
TA = 25 °