FDMS0310S Overview
January 2015 Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 14 A Advanced Package and Silicon bination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 robust package design The FDMS0310S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the...
FDMS0310S Key Features
- Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 14 A
- Advanced Package and Silicon bination for low rDS(on)
- SyncFETTM Schottky Body Diode
- MSL1 robust package design
