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FDMS0310S - MOSFET

General Description

January 2015 Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 14 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 robust package design The FDM

Key Features

  • General.

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FDMS0310S N-Channel PowerTrench® SyncFETTM FDMS0310S N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 4 mΩ Features General Description January 2015 „ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 14 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFETTM Schottky Body Diode „ MSL1 robust package design The FDMS0310S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.