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FDMS037N08B - MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batter

Features

  • RDS(on) = 3.01 mΩ (Typ. ) @ VGS = 10 V, ID = 50 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse Recovery Charge, Qrr = 80 nC.
  • Soft Reverse Recovery Body Diode.
  • Enables Highly Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription

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FDMS037N08B — N-Channel PowerTrench® MOSFET FDMS037N08B N-Channel PowerTrench® MOSFET 75 V, 100 A, 3.7 mΩ November 2013 Features • RDS(on) = 3.01 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr = 80 nC • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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