Datasheet Details
| Part number | FDMS2734 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 335.55 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Datasheet | FDMS2734_FairchildSemiconductor.pdf |
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Overview: FDMS2734 N-Channel UltraFET Trench® MOSFET March 2011 FDMS2734 N-Channel UltraFET Trench® MOSFET 250V, 14A,.
| Part number | FDMS2734 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 335.55 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Datasheet | FDMS2734_FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 122m: at VGS = 10V, ID = 2.8A Max rDS(on) = 130m: at VGS = 6V, ID = 1.7A Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Application DC - DC Conversion Pin 1 S S SG DD DD Power 56 (Bottom view) D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TA = 25°C Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) Ratings 250 ±20 14 2.8 30 78 2.5 -55 to +150 Units V V A W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 1.6 50 °C/W Device Marking FDMS2734 Device FDMS2734 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000 units ©2011 Fairchild Semiconductor Corporation FDMS2734 Rev.C1 1 www.fairchildsemi.com FDMS2734 N-Channel UltraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250PA, VGS = 0V ID = 250PA, referenced to 25°C VDS = 200V, VGS = ±20V, VGS = 0V 250 V 250 mV/°C 1 ±100 PA nA On Characteristics (Note 2) VGS(th) 'VGS(th) 'TJ Gate to
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDMS2734 | N-Channel MOSFET | ON Semiconductor |
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