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FDMS3016DC - N-Channel Dual Cool 56 PowerTrench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Features

  • Dual CoolTM Top Side Cooling PQFN package.
  • Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 12 A.
  • Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A.
  • High performance technology for extremely low rDS(on).
  • RoHS Compliant General.

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Datasheet preview – FDMS3016DC

Datasheet Details

Part number FDMS3016DC
Manufacturer Fairchild Semiconductor
File Size 372.12 KB
Description N-Channel Dual Cool 56 PowerTrench MOSFET
Datasheet download datasheet FDMS3016DC Datasheet
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Full PDF Text Transcription

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FDMS3016DC N-Channel Dual CoolTM 56 PowerTrench® MOSFET FDMS3016DC N-Channel Dual CoolTM 56 PowerTrench® MOSFET 30 V, 49 A, 6.0 mΩ July 2013 Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A „ High performance technology for extremely low rDS(on) „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
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