FDMS3500
Description
Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A - Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A - Advanced Package and Silicon bination for low rDS(on) - MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
