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FDMS3500 - MOSFET

Datasheet Summary

Description

Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Tr

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Datasheet Details

Part number FDMS3500
Manufacturer Fairchild Semiconductor
File Size 313.57 KB
Description MOSFET
Datasheet download datasheet FDMS3500 Datasheet
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FDMS3500 N-Channel Power Trench® MOSFET October 2014 FDMS3500 N-Channel Power Trench® MOSFET 75V, 49A, 14.5m: tm Features General Description „ Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A „ Max rDS(on) = 16.3m: at VGS = 4.5V, ID = 10A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
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