FDMS3600S

FDMS3600S Description

N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been...