FDMS3622S
Overview
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
- Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A
- Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel
- Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 34 A
- Max rDS(on) = 1.6 mΩ at VGS = 4.5 V, ID = 32 A
- Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS Compliant
