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FDMS3686S Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMS3686S PowerTrench® Power Stage FDMS3686S PowerTrench® Power Stage Asymmetric Dual N-Channel.

General Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
  • Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
  • Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A.
  • Max rDS(on) = 3.8 mΩ at VGS = 4.5 V, ID = 21 A.
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
  • RoHS Compliant January 2012.

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