FDMS3686S - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMS3686S
Manufacturer	Fairchild Semiconductor
File Size	538.00 KB
Description	MOSFET
Datasheet	FDMS3686S Datasheet
Additional preview pages of the FDMS3686S datasheet.

Product details

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. Computing Communications General Purpose Point of Load Notebook VCORE G1 D1 D1 D1

Features

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A.
Max rDS(on) = 3.8 mΩ at VGS = 4.5 V, ID = 21 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant January 2012.

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Published: Jan 11, 2017 |