Datasheet4U Logo Datasheet4U.com

FDMS6673BZ - P-Channel MOSFET

Datasheet Summary

Description

Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A Advanced Package and Silicon Combination for Low rDS(on) HBM ESD Protection Level of 8 kV Typical(Note 3) MSL1 Robust Package Design RoHS

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDMS6673BZ

Datasheet Details

Part number FDMS6673BZ
Manufacturer Fairchild Semiconductor
File Size 598.88 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMS6673BZ Datasheet
Additional preview pages of the FDMS6673BZ datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMS6673BZ P-Channel PowerTrench® MOSFET FDMS6673BZ P-Channel PowerTrench® MOSFET -30 V, -82 A, 6.8 m: May 2016 Features General Description „ Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A „ Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A „ Advanced Package and Silicon Combination for Low rDS(on) „ HBM ESD Protection Level of 8 kV Typical(Note 3) „ MSL1 Robust Package Design „ RoHS Compliant The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
Published: |