Datasheet4U Logo Datasheet4U.com

FDMS6673BZ - P-Channel MOSFET

General Description

Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A Advanced Package and Silicon Combination for Low rDS(on) HBM ESD Protection Level of 8 kV Typical(Note 3) MSL1 Robust Package Design RoHS

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS6681Z P-Channel MOSFET ON Semiconductor
FDMS003N08C N-Channel MOSFET ON Semiconductor
FDMS007N08LC N-Channel MOSFET ON Semiconductor
FDMS030N06B N-Channel MOSFET ON Semiconductor
FDMS0310AS N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDMS6681Z P-Channel MOSFET
FDMS015N04B MOSFET
FDMS0300S MOSFET
FDMS0302S MOSFET
FDMS0306AS N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS6673BZ P-Channel PowerTrench® MOSFET FDMS6673BZ P-Channel PowerTrench® MOSFET -30 V, -82 A, 6.8 m: May 2016 Features General Description „ Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A „ Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A „ Advanced Package and Silicon Combination for Low rDS(on) „ HBM ESD Protection Level of 8 kV Typical(Note 3) „ MSL1 Robust Package Design „ RoHS Compliant The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.