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FDMS6681Z - P-Channel MOSFET

General Description

The FDMS6681Z has been designed to minimize losses in load switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Load Switch in Notebook and Server Notebook Battery Pack Power Ma

Key Features

  • Max rDS(on) = 3.2 m: at VGS = -10 V, ID = -21.1 A.
  • Max rDS(on) = 5.0 m: at VGS = -4.5 V, ID = -15.7 A.
  • Advanced Package and Silicon combination for low rDS(on).
  • HBM ESD protection level of 8kV typical(note 3).
  • MSL1 robust package design.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr FDMS6681Z P-Channel PowerTrench® MOSFET May 2009 FDMS6681Z P-Channel PowerTrench® MOSFET -30 V, -49 A, 3.2 m: Features „ Max rDS(on) = 3.2 m: at VGS = -10 V, ID = -21.1 A „ Max rDS(on) = 5.0 m: at VGS = -4.5 V, ID = -15.7 A „ Advanced Package and Silicon combination for low rDS(on) „ HBM ESD protection level of 8kV typical(note 3) „ MSL1 robust package design „ RoHS Compliant General Description The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.