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FDMS7556S - MOSFET

General Description

Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 35 A Max rDS(on) = 1.65 mΩ at VGS = 4.5 V, ID = 31 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL test

Key Features

  • General.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS7556S N-Channel Power Trench® SyncFETTM October 2014 FDMS7556S N-Channel PowerTrench® SyncFETTM 25 V, 130 A, 1.2 mΩ Features General Description „ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 35 A „ Max rDS(on) = 1.65 mΩ at VGS = 4.5 V, ID = 31 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS7556S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.