FDMS7580
Features
General Description
- Max r DS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A
- Max r DS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A
- Advanced Package and Silicon bination for low r DS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance.
Applications
- Control MOSFET for Synchronous Buck Converters
- 100% UIL tested
- Notebook
- Ro HS pliant
- Server
- Telem
- High Efficiency DC-DC Switch Mode Power Supplies
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