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FDMS7580 - MOSFET

General Description

Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery M

Overview

FDMS7580 N-Channel Power Trench® MOSFET October 2014 FDMS7580 N-Channel Power Trench® MOSFET 25 V, 7.

Key Features

  • General.