FDMS7580 Description
Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A Advanced Package and Silicon bination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery MSL1 robust package design This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC...
FDMS7580 Key Features
- Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 15 A
- Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design