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FDMS7682 - MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod

Key Features

  • Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A.
  • Max rDS(on) = 10.4 mΩ at VGS = 4.5 V, ID = 11 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS7682 N-Channel PowerTrench® MOSFET January 2015 FDMS7682 N-Channel PowerTrench® MOSFET 30 V, 6.3 mΩ Features „ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 10.4 mΩ at VGS = 4.5 V, ID = 11 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.