FDMS7682
FDMS7682 is MOSFET manufactured by Fairchild Semiconductor.
FDMS7682 N-Channel Power Trench® MOSFET
January 2015
N-Channel Power Trench® MOSFET
30 V, 6.3 mΩ
Features
- Max r DS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A
- Max r DS(on) = 10.4 mΩ at VGS = 4.5 V, ID = 11 A
- Advanced Package and Silicon bination for low r DS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- Ro HS pliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance.
Applications
- IMVP Vcore Switching for Notebook
- VRM Vcore Switching for Desktop and server
- Oring FET / Load Switching
- DC-DC Conversion
Top
Bottom
Pin 1
D5 D6
4G...
