FDMS8460
Description
Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A - Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A - Advanced Package and Silicon bination for low rDS(on) - MSL1 robust package design - 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
