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FDMS8460 - MOSFET

General Description

Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semicondu

Key Features

  • General.

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Part Number Description Manufacturer
FDMS8460 N-Channel MOSFET ON Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS8460 N-Channel Power Trench® MOSFET October 2014 FDMS8460 N-Channel Power Trench® MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A „ Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.