FDMS8460 Description
at VGS = 10V, ID = 25A Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A Advanced Package and Silicon bination for low rDS(on) MSL1 robust package design 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC - DC...
FDMS8460 Key Features
- Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A
- Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- DC Conversion
- RoHS pliant