FDMS86202ET120 - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMS86202ET120
Manufacturer	Fairchild Semiconductor
File Size	231.91 KB
Description	MOSFET
Datasheet	FDMS86202ET120 Datasheet
Additional preview pages of the FDMS86202ET120 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. DC-DC Conversion Top Pin 1 Bottom S Pin 1 S S G D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Dr

Features

Extended TJ rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A.
Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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Published: Jan 10, 2017 |