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FDMS86202ET120 - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

DC-DC Conversion Top Pin 1

Key Features

  • Extended TJ rating to 175°C.
  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A.
  • Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 102 A, 7.2 mΩ Features „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.