FDMS86300DC Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient . Free Datasheet http://../ ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev.
FDMS86300DC Key Features
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A
- Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A
- High performance technology for extremely low rDS(on)
- 100% UIL Tested
- RoHS pliant