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FDMS86300DC - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.

Features

  • Dual CoolTM Top Side Cooling PQFN package.
  • Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A.
  • Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A.
  • High performance technology for extremely low rDS(on).
  • 100% UIL Tested.
  • RoHS Compliant General.

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Datasheet Details

Part number FDMS86300DC
Manufacturer Fairchild Semiconductor
File Size 318.11 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS86300DC Datasheet
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FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET March 2012 FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET 80 V, 60 A, 3.1 mΩ Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A „ Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A „ High performance technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
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