Datasheet Details
| Part number | FDMS86520L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 293.95 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86520L_FairchildSemiconductor.pdf |
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Overview: FDMS86520L N-Channel PowerTrench® MOSFET FDMS86520L N-Channel PowerTrench® MOSFET 60 V, 22 A, 8.
| Part number | FDMS86520L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 293.95 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86520L_FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A Advanced package and silicon bination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications RoHS pliant Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch Top Bottom Pin 1 S S D S S G S D Power 56 D D D D S D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 60 ±20 22 13.5 60 91 69 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.8 (Note 1a) 50 °C/W Device Marking FDMS86520L Device FDMS86520L Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Fairchild Semiconductor Corporation 1 FDMS86520L Rev.C2 .fairchildsemi.
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