Datasheet Summary
FDMS86520L N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
60 V, 22 A, 8.2 mΩ
October 2014
Features
General Description
- Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A
- Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
- Advanced package and silicon bination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery...