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FDMT800120DC - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Key Features

  • Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 20 A.
  • Max rDS(on) = 6.4 mΩ at VGS = 6 V, ID = 16 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • Low profile 8x8mm MLP package General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET July 2015 FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 120 V, 128 A, 4.2 mΩ Features „ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 6.4 mΩ at VGS = 6 V, ID = 16 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ Low profile 8x8mm MLP package General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.