FDMT800152DC
Overview
Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery Low profile 8x8mm MLP package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
