FDMT800152DC Overview
Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A Advanced Package and Silicon bination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery Low profile 8x8mm MLP package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual...
FDMT800152DC Key Features
- Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A
- Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- Low profile 8x8mm MLP package
