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FDN327N - N-Channel MOSFET

General Description

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process.

It has been optimized for power management applications.

Key Features

  • 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 V.
  • Low gate charge (4.5 nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDN327N October 2001 FDN327N N-Channel 1.8 Vgs Specified PowerTrench® MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 V • Low gate charge (4.5 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • • • Load switch Battery protection Power management D D S G S SuperSOT -3 TM G TA=25 C unless otherwise noted o Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 20 ±8 (Note 1a) Units V V A W °C 2 8 0.