FDN327N Key Features
- 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 V
- Low gate charge (4.5 nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- Part: FDN327N
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 84.80 KB
Other FDN327N Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDN327N | N-Channel MOSFET |
Kexin Semiconductor |
FDN327N | N-Channel MOSFET |