FDN5618P Description
This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
FDN5618P Key Features
- 1.25 A, -60 V. RDS(ON) = 0.170 Ω @ VGS = -10 V RDS(ON) = 0.230 Ω @ VGS = -4.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)