FDN5618P
FDN5618P is 60V P-Channel MOSFET manufactured by Fairchild Semiconductor.
July 2000 PRELIMINARY
60V P-Channel Logic Level Power Trench MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high voltage Power Trench process. It has been optimized for power management applications.
Features
- - 1.25 A,
- 60 V. RDS(ON) = 0.170 Ω @ VGS =
- 10 V RDS(ON) = 0.230 Ω @ VGS =
- 4.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
Applications
- DC-DC converters
- Load switch
- Power management
Super SOT -3
TA=25o C unless otherwise...
