Datasheet4U Logo Datasheet4U.com

FDN5618P - 60V P-Channel MOSFET

General Description

This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process.

It has been optimized for power management applications.

Key Features

  • 1.25 A,.
  • 60 V. RDS(ON) = 0.170 Ω @ VGS =.
  • 10 V RDS(ON) = 0.230 Ω @ VGS =.
  • 4.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDN5618P P-Channel MOSFET ON Semiconductor
FDN5630 N-Channel Power MOSFET ON Semiconductor
FDN5630 N-Channel MOSFET Kexin
FDN5632N-F085 N-Channel Logic Level PowerTrench MOSFET ON Semiconductor
FDN537N N-Channel MOSFET Fairchild

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDN5630 60V N-Channel MOSFET
FDN302P P-Channel MOSFET
FDN304P P-Channel MOSFET
FDN304PZ P-Channel MOSFET
FDN306P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDN5618P July 2000 PRELIMINARY FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –1.25 A, –60 V. RDS(ON) = 0.170 Ω @ VGS = –10 V RDS(ON) = 0.230 Ω @ VGS = –4.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • DC-DC converters • Load switch • Power management D D S SuperSOT -3 TM G TA=25oC unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed PD TJ, TSTG Maximum Power Dissipation Parameter Ratings –60 ±20 (Note 1a) Units V V A W °C –1.25 –10 0.5 0.