FDN8601
Description
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A - Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A - High performance trench technology for extremely low rDS(on) - High power and current handling capability in a widely used surface mount package - Fast switching speed - 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
- Load Switch
