FDN8601 Overview
at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance...
FDN8601 Key Features
- Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
- Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- Fast switching speed
- 100% UIL tested
