FDN86246
Features
General Description
- Max r DS(on) = 261 m: at VGS = 10 V, ID = 1.6 A
- Max r DS(on) = 359 m: at VGS = 6 V, ID = 1.4 A
- High performance trench technology for extremely low r DS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for r DS(on), switching performance and ruggedness.
Application
- PD Switch
- 100% UIL tested
- Ro HS pliant
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage
-Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3) (Note...
