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FDN86246 - MOSFET

General Description

Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switchin

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDN86246 N-Channel PowerTrench® MOSFET December 2010 FDN86246 N-Channel PowerTrench® MOSFET 150 V, 1.6 A, 261 m: Features General Description „ Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A „ Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.