FDN86246 Overview
at VGS = 10 V, ID = 1.6 A Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness....
FDN86246 Key Features
- Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A
- Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- Fast switching speed
- PD Switch
- 100% UIL tested
- RoHS pliant
- Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temp
