Datasheet Details
| Part number | FDN86246 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 181.58 KB |
| Description | MOSFET |
| Datasheet |
 FDN86246 Datasheet
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| Part number | FDN86246 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 181.58 KB |
| Description | MOSFET |
| Datasheet |
FDN86246 Datasheet
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Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.Application
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