FDN86265P
Description
Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A - Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A - Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg - This product is optimised for fast switching applications as well as load switch applications - 100% UIL tested - RoHS pliant This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.
Applications
- Load Switch
