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FDN86265P - MOSFET

General Description

Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg This product is optimised for fast switching applications as well as load switch appli

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDN86265P P-Channel PowerTrench® MOSFET May 2014 FDN86265P P-Channel PowerTrench® MOSFET -150 V, -0.8 A, 1.2 Ω Features General Description „ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A „ Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A „ Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.