FDN86265P Description
Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg This product is optimised for fast switching applications as well as load switch applications 100% UIL tested RoHS pliant This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been...
FDN86265P Key Features
- Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A
- Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A
- Very low RDS-on mid voltage P-channel silicon technology
- This product is optimised for fast switching