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FDP032N08B - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batte

Key Features

  • RDS(on) = 2.85 mΩ (Typ. ) @ VGS = 10 V, ID = 50 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse-Recovery Charge, Qrr.
  • Soft Reverse-Recovery Body Diode.
  • Enables High Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP032N08B — N-Channel PowerTrench® MOSFET FDP032N08B N-Channel PowerTrench® MOSFET 80 V, 211 A, 3.3 mΩ November 2013 Features • RDS(on) = 2.85 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.