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FDP050AN06A0 - N-Channel MOSFET

Key Features

  • r DS(ON) = 4.3mΩ (Typ. ), V GS = 10V, ID = 80A.
  • Qg(tot) = 61nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82575.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB050AN06A0 / FDP050AN06A0 February 2003 FDB050AN06A0 / FDP050AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ Features • r DS(ON) = 4.3mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 61nC (Typ.