Datasheet4U Logo Datasheet4U.com

FDP12N50 - N-Channel MOSFET

Download the FDP12N50 datasheet PDF. This datasheet also covers the FDPF12N50 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 0.55Ω (Typ. )@ VGS = 10V, ID = 6A.
  • Low gate charge ( Typ. 22nC).
  • Low Crss ( Typ. 11pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant UniFETTM tm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDPF12N50_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDP12N50NZ N-Channel MOSFET INCHANGE
FDP120N10 N-Channel MOSFET INCHANGE
FDP100N10 N-Channel MOSFET INCHANGE
FDP150N10 N-Channel MOSFET INCHANGE
FDP16AN08A0 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP12N50F N-Channel MOSFET
FDP12N50NZ N-Channel MOSFET
FDP12N35 350V N-Channel MOSFET
FDP12N60NZ N-Channel MOSFET
FDP120AN15A0 N-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP12N50 / FDPF12N50 N-Channel MOSFET June 2007 FDP12N50 / FDPF12N50 N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.