FDP12N50 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...
FDP12N50 Key Features
- RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A
- Low gate charge ( Typ. 22nC)
- Low Crss ( Typ. 11pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Derate above 25oC (TC = 25oC) -Continuous (TC = 100oC)
- Units V V A A mJ A mJ V/ns W W/oC
- Drain current limited by maximum junction temperature