Datasheet Details
| Part number | FDP150N10 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 203.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDP150N10_FairchildSemiconductor.pdf |
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Overview: FDP150N10 N-Channel PowerTrench® MOSFET March 2013 FDP150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 15.
| Part number | FDP150N10 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 203.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDP150N10_FairchildSemiconductor.pdf |
|
|
|
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Tele PSU • Battery Protection Circuit • Motor drives and Uninterruptible Power Supplies • Micro Solar Inverter D G G D S TO-220 MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink Typ.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDP150N10 | N-Channel MOSFET | INCHANGE |
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