FDP2570
Description
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
- 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V
- Low gate charge (40n C typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- 175°C maximum junction temperature rating
G D S TO-220
FDP Series
TO-263AB
FDB Series
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
TA=25o C unless otherwise noted
Parameter
Rat...
