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FDP3651U - N-Channel MOSFET

Key Features

  • RDS(on) = 15 mΩ ( Typ. ) @ VGS = 10 V, ID = 80 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • Low Miller Charge.
  • UIS Capability (Single Pulse and Repetitive Pulse).

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Full PDF Text Transcription (Reference)

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FDP3651U — N-Channel PowerTrench® MOSFET October 2013 FDP3651U N-Channel PowerTrench® MOSFET 100 V, 80 A, 18 mΩ Features • RDS(on) = 15 mΩ ( Typ.