Datasheet Summary
- N-Channel PowerTrench® MOSFET
October 2013
N-Channel PowerTrench® MOSFET
100 V, 80 A, 18 mΩ
Features
- RDS(on) = 15 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
- High Performance Trench Technology for Extremely Low RDS(on)
- Low Miller Charge
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
- Consumer Appliances
- Synchronous Rectification
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplie s
- Micro Solar Inverter
GD S
TO-220
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGSS ID PD EAS TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current
- Continuous
- Pulsed Power...
