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FDP55N06 - N-Channel MOSFET

Download the FDP55N06 datasheet PDF. This datasheet also covers the FDPF55N06 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDPF55N06_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP5500_F085 N-Channel UltraFET Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FDP55N06/FDPF55N06 60V N-Channel MOSFET UniFET FDP55N06/FDPF55N06 60V N-Channel MOSFET Features • • • • • • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.