Datasheet4U Logo Datasheet4U.com

FDP5690 - 60V N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V.
  • Critical DC electrical parameters specified at evevated temperature.
  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  • High performance trench technology for extremely low RDS(ON).
  • 175°C maximum junction temperature rating. D D G G D S TO-220 FDP Series G S TC = 25°C unless otherwise noted TO-263AB FDB Series.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDP51N25 N-Channel MOSFET ON Semiconductor
FDP52N20 N-Channel MOSFET ON Semiconductor
FDP5500-F085 N-Channel UltraFET Power MOSFET ON Semiconductor
FDP027N08B N-Channel MOSFET ON Semiconductor
FDP030N06 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP5645 60V N-Channel MOSFET
FDP5680 60V N-Channel MOSFET
FDP51N25 N-Channel UniFET MOSFET
FDP52N20 N-Channel MOSFET
FDP5500_F085 N-Channel UltraFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP5690/FDB5690 July 2000 FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at evevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trench technology for extremely low RDS(ON).