Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V.
- Critical DC electrical parameters specified at evevated temperature.
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
- High performance trench technology for extremely low RDS(ON).
- 175°C maximum junction temperature rating. D
D
G
G D S
TO-220
FDP Series
G S
TC = 25°C unless otherwise noted
TO-263AB
FDB Series.
FDP5690 Datasheet
