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FDP65N06 - N-Channel MOSFET

Datasheet Summary

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 13 mΩ (Typ. ) @ VGS = 10 V, ID = 32.5 A.
  • Low Gate Charge ( typical 33 nC).
  • Low Crss ( typical 35 pF).
  • Fast Switching.
  • Improved dv/dt Capability November 2013.

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Datasheet Details

Part number FDP65N06
Manufacturer Fairchild Semiconductor
File Size 1.05 MB
Description N-Channel MOSFET
Datasheet download datasheet FDP65N06 Datasheet
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FDP65N06 — N-Channel UniFETTM MOSFET FDP65N06 N-Channel UniFETTM MOSFET 60 V, 65 A, 16 mΩ Features • RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 32.5 A • Low Gate Charge ( typical 33 nC) • Low Crss ( typical 35 pF) • Fast Switching • Improved dv/dt Capability November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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