FDP6644S
Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.
Key Features
- 28 A, 30 V. RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V
- Includes SyncFET Schottky body diode
- Low gate charge (27nC typical)
- High performance trench technology for extremely low RDS(ON) and fast switching
- High power and current handling capability
- D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S
