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FDP6644S - N-Channel MOSFET

General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Key Features

  • 28 A, 30 V. RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky body diode.
  • Low gate charge (27nC typical).
  • High performance trench technology for extremely low RDS(ON) and fast switching.
  • High power and current handling capability.
  • D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Curren.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP6644S/FDB6644S JANUARY 2002 FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6644S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6644S/FDB6644S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6644/FDB6644 in parallel with a Schottky diode. Features • 28 A, 30 V. RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.