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FDP6670AL - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

  • 80 A, 30 V. RDS(ON) = 0.0065 Ω @ VGS=10 V, RDS(ON) = 0.0085 Ω @ VGS= 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Par.

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Datasheet Details

Part number FDP6670AL
Manufacturer Fairchild Semiconductor
File Size 413.57 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP6670AL Datasheet
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July 1998 FDP6670AL/FDB6670AL N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 80 A, 30 V. RDS(ON) = 0.0065 Ω @ VGS=10 V, RDS(ON) = 0.0085 Ω @ VGS= 4.5 V. Critical DC electrical parameters specified at elevated temperature.
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