FDP6670AS
Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670AS includes an integrated Schottky diode using Fairchild’s monolithic Sync FET technology. The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.
Features
- 31 A, 30 V.
RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
- Includes Sync FET Schottky body diode
- Low gate charge (28n C typical)
- High performance trench technology for extremely low RDS(ON) and fast switching
- High power and current handling capability
TO-220
FDP Series
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage...
