FDP6690S
Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild’s monolithic Sync FET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode.
Features
- 21 A, 30 V. RDS(ON) = 15.5 mΩ @ VGS = 10 V RDS(ON) = 23.0 mΩ @ VGS = 4.5 V
- Includes Sync FET Schottky body diode
- Low gate charge (11n C typical)
- High performance trench technology for extremely low RDS(ON) and fast switching
- High power and current handling capability
G D TO-220 S
FDP Series
TO-263AB
FDB Series
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain...
