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FDP6690S - N-Channel MOSFET

General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Key Features

  • 21 A, 30 V. RDS(ON) = 15.5 mΩ @ VGS = 10 V RDS(ON) = 23.0 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky body diode.
  • Low gate charge (11nC typical).
  • High performance trench technology for extremely low RDS(ON) and fast switching.
  • High power and current handling capability D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
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FDP6670AS 30V N-Channel PowerTrench SyncFET
FDP6670S N-Channel MOSFET
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FDP6021P 20V P-Channel MOSFET
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FDP6030L N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP6690S/FDB6690S SEPTEMBER 2001 FDP6690S/FDB6690S 30V N-Channel PowerTrench® SyncFET ™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode. Features • 21 A, 30 V. RDS(ON) = 15.5 mΩ @ VGS = 10 V RDS(ON) = 23.0 mΩ @ VGS = 4.