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FDP7N50 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V.
  • Low gate charge ( typical 12.8 nC).
  • Low Crss ( typical 9 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability UniFET.

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Datasheet Details

Part number FDP7N50
Manufacturer Fairchild Semiconductor
File Size 318.50 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP7N50 Datasheet
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FDP7N50/FDPF7N50 500V N-Channel MOSFET March 2007 FDP7N50/FDPF7N50 500V N-Channel MOSFET Features • 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series GD S www.
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