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FDP8030L - N-Channel MOSFET

General Description

This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V.
  • Critical DC electrical parameters specified at elevated temperature.
  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  • High performance trench technology for extremely low RDS(ON).
  • 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbo.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP8030L/FDB8030L November 1999 FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.