Datasheet Summary
FDP8440 N-Channel PowerTrench® MOSFET
April 2013
N-Channel PowerTrench® MOSFET
40 V, 277 A, 2.2 mΩ
Features
- RDS(on) = 1.64 mΩ (Typ.)@ VGS = 10 V, ID = 80 A
- Qg(tot) = 345 nC (Typ.)@ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- RoHS pliant
Applications
- Power Tools
- Motor Drives and Uninterruptible Power Supplies
- Synchronous Rectification
- Battery Protection Circuit
TO-220
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS VGSS
IDM EAS PD
Drain to Source Voltage
Gate to Source Voltage Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
-...