FDP8860 Description
Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 80A Max rDS(on) = 2.9mΩ at VGS = 4.5V, ID = 80A Low Miller Charge Low Qrr Body Diode UIL Capability (Single Pulse and Repetitive Pulse) RoHS pliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge,...
FDP8860 Key Features
- Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 80A
- Max rDS(on) = 2.9mΩ at VGS = 4.5V, ID = 80A
- Low Miller Charge
- Low Qrr Body Diode
- UIL Capability (Single Pulse and Repetitive Pulse)
- RoHS pliant
- DC Conversion
- Start / Alternator Sytems