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FDP8860 - N-Channel MOSFET

General Description

Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 80A Max rDS(on) = 2.9mΩ at VGS = 4.5V, ID = 80A Low Miller Charge Low Qrr Body Diode UIL Capability (Single Pulse and Repetitive Pulse) RoHS Compliant tm This N-Channel MOSFET has been designed speci

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com FDP8860 N-Channel PowerTrench® MOSFET September 2006 FDP8860 N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ Features General Description „ Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 80A „ Max rDS(on) = 2.9mΩ at VGS = 4.5V, ID = 80A „ Low Miller Charge „ Low Qrr Body Diode „ UIL Capability (Single Pulse and Repetitive Pulse) „ RoHS Compliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.