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FDPC5018SG - MOSFET

General Description

Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens R

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDPC5018SG PowerTrench® Power Clip FDPC5018SG PowerTrench® Power Clip 30V Asymmetric Dual N-Channel MOSFET September 2015 Features General Description Q1: N-Channel „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A „ Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A „ Low Inductance Packaging Shortens Rise/Fall Times, Result- ing in Lower Switching Losses „ MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.