Datasheet Summary
FDPC8016S PowerTrench® Power Clip
October 2013
PowerTrench® Power Clip 25V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
- Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
Q2: N-Channel
- Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A
- Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A
- Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS pliant
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally...
