FDPC8016S Overview
N-Channel Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Q2: N-Channel Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS...
FDPC8016S Key Features
- Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
- Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A
- Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS pliant
