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FDPC8016S - MOSFET

General Description

Q1: N-Channel Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Q2: N-Channel Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A Low inductance packaging shortens r

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDPC8016S PowerTrench® Power Clip October 2013 FDPC8016S PowerTrench® Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Q2: N-Channel „ Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A „ Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.