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FDPF045N10A N-Channel PowerTrench® MOSFET
August 2014
FDPF045N10A
N-Channel PowerTrench® MOSFET
100 V, 67 A, 4.5 mΩ
Features
• RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 67 A • Fast Switching Speed
• Low Gate Charge, QG = 57 nC(Typ.) • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.