Datasheet Summary
FDP10N60NZ / FDPF10N60NZ
- N-Channel UniFETTM II MOSFET
November 2013
N-Channel UniFETTM II MOSFET
600 V, 10 A, 750 mΩ Features
- RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A
- Low Gate Charge (Typ. 23 nC)
- Low Crss (Typ. 10 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Improved Capability
- RoHS pliant
FDP10N60NZ / FDPF10N60NZ
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal...