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FDPF10N60NZ - N-Channel UniFET II MOSFET

General Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Key Features

  • RDS(on) = 640 mΩ (Typ. ) @ VGS = 10 V, ID = 5 A.
  • Low Gate Charge (Typ. 23 nC).
  • Low Crss (Typ. 10 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Improved Capability.
  • RoHS Compliant FDP10N60NZ / FDPF10N60NZ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features • RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 23 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant FDP10N60NZ / FDPF10N60NZ Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.