Datasheet Summary
FDP12N50 / FDPF12N50 N-Channel MOSFET
June 2007
FDP12N50 / FDPF12N50
N-Channel MOSFET
500V, 11.5A, 0.65Ω Features
- RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A
- Low gate charge ( Typ. 22nC)
- Low Crss ( Typ. 11pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
UniFETTM tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited...
