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FDPF17N60NT - MOSFET

General Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Key Features

  • RDS(on) = 290 mΩ (Typ. ) @ VGS = 10 V, ID = 8.5 A.
  • Low Gate Charge (Typ. 48 nC).
  • Low Crss (Typ. 23 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDPF17N60NT — N-Channel UniFETTM II MOSFET FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features • RDS(on) = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply December 2013 Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.