Datasheet Summary
- N-Channel UniFETTM II MOSFET
N-Channel UniFETTM II MOSFET
600 V, 17 A, 340 mΩ
Features
- RDS(on) = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A
- Low Gate Charge (Typ. 48 nC)
- Low Crss (Typ. 23 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS pliant
Applications
- LCD/LED/PDP TV
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
December 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche...
